ELECTRONIC PROPERTIES OF A SEMICONDUCTOR TWO-BARRIER STRUCTURE

Authors

  • Voxob Rustamovich Rasulov Docent, Department of Physics, Fergana State University, Uzbekistan.
  • Rustam Yavkachovich Rasulov Professor, Department of Physics, Fergana State University, Uzbekistan.
  • Mamatova Mahliyo Adhamovna PhD student, Fergana state university, Uzbekistan.
  • Nurillo Ubaydullo o’g’li Kodirov PhD student, Fergana state university, Uzbekistan.

Keywords:

transmission coefficient, two-barrier semiconductor structure, size quantization, energy spectrum, potential well.

Abstract

The dependence of the transmission coefficient for an electron with energy E tunneling through a potential barrier of finite height and thickness in a two-barrier semiconductor structure is calculated, and it is shown that this dependence has an oscillatory character.

On the basis of the continuity equation, the energy dependence of the frequency of electron collisions with the walls of the size-quantized potential is analyzed.

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Published

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How to Cite

Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, Mamatova Mahliyo Adhamovna, & Nurillo Ubaydullo o’g’li Kodirov. (2022). ELECTRONIC PROPERTIES OF A SEMICONDUCTOR TWO-BARRIER STRUCTURE. EPRA International Journal of Multidisciplinary Research (IJMR), 8(5), 58–62. Retrieved from http://eprajournals.net/index.php/IJMR/article/view/426

Issue

Vol. 8 No. 5 (2022): EPRA International Journal of Multidisciplinary Research (IJMR)

Section

Articles