DIFFERENTIAL RESISTANCE TO ALTERNATING CURRENT DURING BREAKDOWN OF CURRENT IN DEEP LEVELS IN A SILICON P-N JUNCTION

Abstract

The current-voltage characteristic, the dependence of the nonmonotonic temperature on the differential resistance, and the change in the sign of the temperature coefficient depend on the change in the breakdown voltage. The change in the sign of the temperature coefficient is associated with the charging of the space charge region in the p-n junction, which occurs in the deep level. Because of the avalanche breakdown in silicon, the charge change in the deep level has a strong effect on increasing and decreasing the probability of microplasma formation. Measuring the possibility of turning on microplasma without filling deep centers makes it possible to obtain information about the mechanism of creation of charge carriers in microplasma channels of the p-n junction.