TAGAEV M.B., ABDREYMOV A.A. DIFFERENTIAL RESISTANCE TO ALTERNATING CURRENT DURING BREAKDOWN OF CURRENT IN DEEP LEVELS IN A SILICON P-N JUNCTION. EPRA International Journal of Research and Development (IJRD), [S. l.], v. 8, n. 6, p. 170–176, 2023. Disponível em: https://eprajournals.net/index.php/IJRD/article/view/2266. Acesso em: 22 jul. 2024.